product standards mos fet MTM232230LBF low drive voltage: 2.5 v drive gate source drain ? absolute maximum ratings ta = 25 ? c note) *1 pulse width Q 10 ? s, duty cycle Q 1 % *2 measuring on ceramic board at 40 ? 38 ? 0.1 mm absolute maximum rating pd without heat sink shall be made 150 mw. gate source drain page unit : mm sot-323 code jeita 1of6 sc-70 2. 3. 1. MTM232230LBF silicon n-channel mos fet ? features ? low drain-source on-state resistance : rds(on) typ = 20 m ? (vgs = 4.0 v) for switching ? halogen-free / rohs compliant panasonic smini3-g1-b (eu rohs / ul-94 v-0 / msl : level 1 compliant) ? marking symbol : 1. 2. 3. pcs / reel (standard) ? g storage temperature range tstg -55 to +150 ? c internal connection pin name 4.5 18 500 150 ? c + 85 ? c bk drain current id a drain-source voltage vds 20 v ? ? packaging a power dissipation *2 pd mw peak drain current *1 idp embossed type (thermo-compression sealing) : 3 000 -40 to gate-source voltage vgs channel temperature tch operating ambient temperature topr ? 10 2.1 2.0 0.9 1.25 1.3 0.3 (0.65) 0.15 12 3 (0.65) 1 (g) 2 (s) (d) 3 d o c n o . t t4 - ea - 12901 r e v i sio n . 3 e s t a b li s h e d : 2010 - 12 - 15 r e v i s e d : 2013 - 07 - 01
product standards mos fet MTM232230LBF ? electrical characteristics ta = 25 ? c ? 3 ? c note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. *1 pulse test : pulse width < 300 ? s duty cycle < 2 % *2 turn-on and turn-off test circuit page 2 of 6 ? g ? ? ? 10 vgs = ? 8 v, vds = 0 v drain-source surrender voltage vdss 20 drain-source cutoff current idss gate-source cutoff current igss 20 28 gate threshold voltage vth 0.4 rds(on)2 26 40 id = 1 a, vds = 10 v, f = 1 khz forward transfer admittance *1 |yfs| 3.5 reverse transfer capacitance (common source) crss short-circuit input capacitance (common source) ciss turn-off time *2 80 1 200 short-circuit output capacitance (common source) coss 85 id = 1 ma, vgs = 0 v v vds = 20 v, vgs = 0 v ? a 1.0 ? a id = 1.0 ma, vds = 10.0 v v drain-source on resistance *1 id = 1 a, vgs = 4 v m ? id = 0.6 a, vgs = 2.5 v 0.85 1.3 rds(on)1 s turn-on time *2 ton vdd = 10 v, vgs = 0 to 4 v id = 1 a 16 ns pf vds = 10 v, vgs = 0, f = 1 mhz ns toff vdd = 10 v, vgs = 4 to 0 v id = 1 a 220 d o c n o . t t4 - ea - 12901 r e v i sio n . 3 e s t a b li s h e d : 2010 - 12 - 15 r e v i s e d : 2013 - 07 - 01
product standards mos fet MTM232230LBF *2 turn-on and turn-off test circuit page 3 of 6 vdd = 10 v vout vin id = 1 a rl = 10 ? d s g 50 ? vin 0 v 4 v pw = 10 s d.c. Q 1 % 10 % 90 % 10 % 90 % vin vout t(on) t(off) d o c n o . t t4 - ea - 12901 r e v i sio n . 3 e s t a b li s h e d : 2010 - 12 - 15 r e v i s e d : 2013 - 07 - 01
product standards mos fet MTM232230LBF technical data ( reference ) page capacitance - vds id - vds id - vgs vds - vgs rds(on) - id dynamic input/output characteristics 4of6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 drain-source voltage vds (v) drain current id (a) vgs = 1.5 v 2.5 v 1.0 v 4.0 v 2.0 v 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0 0.5 1 1.5 gate-source voltage vgs (v) drain current id (a) 25 ta = 85 0 0.1 0.2 0.3 0.4 0.5 012345 gate-source voltage vgs (v) drain-source voltage vds (v) id = 2 a 0.5 a 1 a 10 100 0.01 0.1 1 10 drain current id (a) drain source on-state resistance rds(on) (m ? ) vgs = 4.0 v 2.5 v 10 100 1000 10000 0.1 1 10 drain-source voltage vds (v) capacitance c (pf) ciss coss crss 0 2 4 6 8 10 0 5 10 15 20 25 30 total gate charge qg (nc) gate-source voltage vgs (v) vdd = 10 v -40 d o c n o . t t4 - ea - 12901 r e v i sio n . 3 e s t a b li s h e d : 2010 - 12 - 15 r e v i s e d : 2013 - 07 - 01
product standards mos fet MTM232230LBF technical data ( reference ) page vth - ta rds(on) - ta pd - ta safe operating area 5of rth - tsw 6 0 0.5 1 1.5 -50 0 50 100 150 temperature ta ( ) gate-source threshold voltage (v) 0 10 20 30 40 50 -50 0 50 100 150 temperature ( ) drain-source on-resistance rds(on) (m ? ) vgs = 2.5 v 4.0 v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 50 100 150 temperature ta ( ? c) total power dissipation pd (w) 1 10 100 1000 0.01 0.1 1 10 100 1000 pulse width tsw (s) thermal resistance rth ( ? c/w) 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 drain-source voltage vds (v) drain current id (a) idp = 18 a operation in this area is limited by rds(on) ta = 25 ? c, glass epoxy board (25.425.4t0.8 mm) coated with copper foil, which has more than 300mm 2 . 100 ms 1 s dc 1 ms 10 ms mounted on ceramic board (40 x 38 x t0.1 mm) d o c n o . t t4 - ea - 12901 r e v i sio n . 3 e s t a b li s h e d : 2010 - 12 - 15 r e v i s e d : 2013 - 07 - 01
product standards mos fet MTM232230LBF page 6 smini3-g1-b ? 6of land pattern (reference) (unit : mm) 0.3 +0.1 0.0 2.1 0.1 1.25 0.10 0.15 +0.10 -0.05 0 to 0.1 1.3 0.1 2.0 0.2 (0.425) (0.65) (0.65) 0.2 0.1 0.9 +0.2 -0.1 0.9 0.1 (8) (10) 12 3 0.8 0.9 1.9 1.3 d o c n o . t t4 - ea - 12901 r e v i sio n . 3 e s t a b li s h e d : 2010 - 12 - 15 r e v i s e d : 2013 - 07 - 01
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